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HYNIX H5TC2G63GFR-PBK

Produttore
Cod. Prod.
H5TC2G63GFR-PBK
Cod. LCSC
C499915
Imballo
FBGA-96
Numero Cliente
Attr. chiave
2Gbit 1.6GHz DDR3L SDRAM FBGA-96 Memory
Scheda TecnicaHYNIX H5TC2G63GFR-PBK
Garanzia su ogni ordine
100% Autentico · Reso o Sostituzione entro 30 Giorni
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
QtàPr. unit.(Solo per riferimento)Importo totale
1+$ 2.7877$ 2.79
10+$ 2.3752$ 23.75
30+$ 2.015$ 60.45
100+$ 1.7672$ 176.72
500+$ 1.6532$ 826.60
1,000+$ 1.6009$ 1600.90
Package Standard1600/Full Tray
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Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaIntegrated Circuits (ICs)/Memory/Memory
ProduttoreHYNIX
ImballoFBGA-96
Operating Temperature-40℃~+105℃
FeaturesAuto self-refresh;Auto precharge function;Asynchronous reset function;Data mask function;Dynamic on-chip termination;ZQ calibration function;Write leveling function
Refresh Current9mA
Memory Size2Gbit
Voltage - Supply1.35V~1.45V;35mA
Clock Frequency1.6GHz
Memory FormatDDR3L SDRAM

Descrizione

Traduzione AI

The H5TC2G83GFR-xxK, H5TC2G63GFR-xxK, H5TC2G83GFR-xxI, H5TC2G63GFR-xxI are a 2Gb low power Double Data Rate III (DDR3L) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density, high bandwidth and low power operation at 1.35V. SK Hynix DDR3L SDRAM provides backward compatibility with the 1.5V DDR3 based environment without any changes. SK Hynix 2Gb DDR3L SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the clock (falling edges of the clock), data, data strobes and write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.

Caratteristiche

Traduzione AI
  • Industrial and Automotive temperature compliant
  • VDD = VDDQ = 1.35V + 0.100 / - 0.067V
  • Fully differential clock inputs (CK, CK) operation
  • Differential Data Strobe (DQS, DQS)
  • On chip DLL align DQ, DQS and DQS transition with CK transition
  • DM masks write data-in at the both rising and falling edges of the data strobe
  • All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock
  • Programmable CAS latency 6, 7, 8, 9, 10, 11, 12 and 13 supported
  • Programmable additive latency 0, CL - 1, and CL - 2 supported
  • Programmable CAS Write latency (CWL) = 5, 6, 7, 8 and 9
  • Programmable burst length 4/8 with both nibble sequential and interleave mode BL switch on the fly
  • 8 banks
  • Average Refresh Cycle (Tcase 0 ℃ ~ 95 ℃: 7.8 µs at 0 ℃ ~ 85 ℃; 3.9 µs at 85 ℃ ~ 95 ℃; 1.95 μs at 95 ℃ ~ 105 ℃. Operating temperature - Industrial (-40 ℃ ≤ Tcase ≤ +95 ℃), Automotive -40 ℃ ≤ Tcase ≤ +105 ℃)
  • JEDEC standard 78 ball FBGA(x8), 96 ball FBGA(x16)
  • Driver strength selected by EMRS
  • Dynamic On Die Termination supported
  • Asynchronous RESET pin supported
  • ZQ calibration supported
  • TDQS (Termination Data Strobe) supported (x8 only)
  • Write Levelization supported
  • 8 bit pre - fetch