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ST STGF5H60DF product image
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ST STGF5H60DFRoHS

Manufacturer
ST
MPN
STGF5H60DF
LCSC Part #
C498164
Packaging
TO-220FP
Customer #
Key Attributes
Trench gate field-stop 600 V, 5 A high speed H series IGBT
Datasheetpdf iconST STGF5H60DF

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerST
PackagingTO-220FP
Pd - Power Dissipation88W
Td(off)140ns
Operating Temperature-55℃~+175℃
Td(on)30ns
Current - Collector(Ic)10A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)19pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.8V@250uA
Vce Saturation(VCE(sat))1.95V@5A,15V
Reverse Recovery Time(trr)134.5ns
Switching Energy(Eoff)78.5uJ
Turn-On Energy (Eon)56uJ
Input Capacitance(Cies)855pF
Output Capacitance(Coes)34pF
Gate Charge(Qg)38nC@15V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Features

AI Translation
  • High-speed switching
  • Tight parameter distribution
  • Safe paralleling
  • Low thermal resistance
  • Short-circuit rated
  • Ultrafast soft recovery antiparallel diode

Applications

AI Translation
  • Motor control
  • UPS
  • PFC
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QtyUnit Price(Reference Only)Total Amount
1+$ 1.1041$ 0.8392$ 0.84
10+$ 1.0802$ 0.8210$ 8.21
50+$ 1.0642$ 0.8088$ 40.44
100+$ 1.0482$ 0.7967$ 79.67
Standard Packaging50/Full Tube
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