Huixin H12N90
| Manufacturer | HuixinAsian Brands |
| MPN | H12N90 |
| LCSC Part # | C49435647 |
| Packaging | TO-3PB |
| Customer # | |
| Key Attributes | MOSFET N-CH 900V 12A TO-3PB |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Huixin | |
| Packaging | TO-3PB | |
| Drain to Source Voltage | 900V | |
| Output Capacitance(Coss) | 260pF | |
| Current - Continuous Drain(Id) | 12A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 300W | |
| RDS(on) | 750mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.7nF | |
| Gate Charge(Qg) | 72nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Huixin | |
| Packaging | TO-3PB | |
| Drain to Source Voltage | 900V | |
| Output Capacitance(Coss) | 260pF | |
| Current - Continuous Drain(Id) | 12A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 300W | |
| RDS(on) | 750mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.7nF | |
| Gate Charge(Qg) | 72nC@10V | |
| Type | N-Channel |
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Features
AI Translation
- Low gate charge
- Low reverse transfer capacitance (Crss)
- 100% avalanche tested
- RoHS compliant
In-Stock: 1,025
1,025 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 5.9072$ 5.1984 | $ 5.20 |
| 10+ | $ 5.3272$ 4.6880 | $ 46.88 |
| 25+ | $ 4.9828$ 4.3849 | $ 109.62 |
| 100+ | $ 4.6335$ 4.0775 | $ 407.75 |
| 500+ | $ 4.4726$ 3.9359 | $ 1967.95 |
| 800+ | $ 4.4012$ 3.8731 | $ 3098.48 |
Standard Packaging25/Full Tube | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Huixin | |
| Packaging | TO-3PB | |
| Drain to Source Voltage | 900V | |
| Output Capacitance(Coss) | 260pF | |
| Current - Continuous Drain(Id) | 12A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 300W | |
| RDS(on) | 750mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.7nF | |
| Gate Charge(Qg) | 72nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Huixin | |
| Packaging | TO-3PB | |
| Drain to Source Voltage | 900V | |
| Output Capacitance(Coss) | 260pF | |
| Current - Continuous Drain(Id) | 12A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 300W | |
| RDS(on) | 750mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.7nF | |
| Gate Charge(Qg) | 72nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Low gate charge
- Low reverse transfer capacitance (Crss)
- 100% avalanche tested
- RoHS compliant
C49435647 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

