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MDD(Microdiode Semiconductor) ST20100
| Manufacturer | MDD(Microdiode Semiconductor)Asian Brands |
| MPN | ST20100 |
| LCSC Part # | C49383119 |
| Packaging | TO-277 |
| Customer # | |
| Key Attributes | DIODE SCHOTTKY 100V TO-277 |
| Datasheet |  MDD(Microdiode Semiconductor) ST20100 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | MDD(Microdiode Semiconductor) | |
| Packaging | TO-277 | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - Forward(Vf@If) | 640mV@20A | |
| Current - Rectified | 20A | |
| Non-Repetitive Peak Forward Surge Current | 320A |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | MDD(Microdiode Semiconductor) | |
| Packaging | TO-277 | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Type | Description | |
|---|---|---|
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - Forward(Vf@If) | 640mV@20A | |
| Current - Rectified | 20A | |
| Non-Repetitive Peak Forward Surge Current | 320A |
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Features
AI Translation
- Trench MOS Schottky Barrier Diode
- Low forward voltage drop
- Thin package - typical body height 1.1 mm
- Moisture Sensitivity Level: Level 1, compliant with J-STD-020
- Guaranteed high-temperature soldering withstand: 260°C / 10 seconds - RoHS compliant
- Halogen-free per IEC 61249-2-21
In-Stock: 9,020
9,020 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5858 | $ 0.59 |
| 10+ | $ 0.4703 | $ 4.70 |
| 30+ | $ 0.4199 | $ 12.60 |
| 100+ | $ 0.358 | $ 35.80 |
| 500+ | $ 0.2832 | $ 141.60 |
| 1,000+ | $ 0.2669 | $ 266.90 |
Standard Packaging5000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | MDD(Microdiode Semiconductor) | |
| Packaging | TO-277 | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - Forward(Vf@If) | 640mV@20A | |
| Current - Rectified | 20A | |
| Non-Repetitive Peak Forward Surge Current | 320A |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | MDD(Microdiode Semiconductor) | |
| Packaging | TO-277 | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Type | Description | |
|---|---|---|
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - Forward(Vf@If) | 640mV@20A | |
| Current - Rectified | 20A | |
| Non-Repetitive Peak Forward Surge Current | 320A |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Trench MOS Schottky Barrier Diode
- Low forward voltage drop
- Thin package - typical body height 1.1 mm
- Moisture Sensitivity Level: Level 1, compliant with J-STD-020
- Guaranteed high-temperature soldering withstand: 260°C / 10 seconds - RoHS compliant
- Halogen-free per IEC 61249-2-21
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |