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JTD JTDMMDT5551 product image
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JTD JTDMMDT5551RoHS

Manufacturer
JTDAsian Brands
MPN
JTDMMDT5551
LCSC Part #
C49308270
Packaging
SOT-363
Customer #
Key Attributes
160V 300 NPN 2 NPN 200mA SOT-363 Single Bipolar Transistors RoHS
Datasheetpdf iconJTD JTDMMDT5551

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
ManufacturerJTD
PackagingSOT-363
Current - Collector Cutoff50nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO160V
DC Current Gain300
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation200mW
typeNPN
Number2 NPN
Current - Collector(Ic)200mA
Vce Saturation(VCE(sat))200mV
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Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Features

AI Translation
  • Epitaxial Planar Die Construction
  • Complementary PNP Type Available(MMDT5401)
  • Ideal for Medium Power Amplification and Switching
In-Stock: 2,860
2,860 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
20+$ 0.0262$ 0.52
200+$ 0.0206$ 4.12
600+$ 0.0174$ 10.44
3,000+$ 0.0156$ 46.80
9,000+$ 0.0139$ 125.10
21,000+$ 0.013$ 273.00
Standard Packaging3000/Full Reel
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