HXY MOSFET FDS6614A-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	SOP-8
Configuration	Standalone
Drain to Source Voltage	30V
Output Capacitance(Coss)	77pF
Current - Continuous Drain(Id)	8.5A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.5V
Pd - Power Dissipation	1.5W
Reverse Transfer Capacitance (Crss@Vds)	59pF
RDS(on)	14mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	583pF
Gate Charge(Qg)	6nC@4.5V
Type	N-Channel

In-Stock: 197

197 In stock, ships now

Not recommended for new designs

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Qty	Unit Price	Total Amount
1+	$ 0.4855$ 0.3884	$ 0.39
10+	$ 0.3808$ 0.3047	$ 3.05
30+	$ 0.3364$ 0.2692	$ 8.08
100+	$ 0.2809$ 0.2248	$ 22.48
500+	$ 0.2555$ 0.2044	$ 102.20
1,000+	$ 0.2412$ 0.1930	$ 193.00
Standard Packaging3000/Full Reel

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	SOP-8
Configuration	Standalone
Drain to Source Voltage	30V
Output Capacitance(Coss)	77pF
Current - Continuous Drain(Id)	8.5A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.5V
Pd - Power Dissipation	1.5W
Reverse Transfer Capacitance (Crss@Vds)	59pF
RDS(on)	14mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	583pF
Gate Charge(Qg)	6nC@4.5V
Type	N-Channel