HXY MOSFET IRLR2905TRLPBF-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Configuration	Standalone
Drain to Source Voltage	60V
Output Capacitance(Coss)	86pF
Current - Continuous Drain(Id)	30A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Pd - Power Dissipation	34.7W
RDS(on)	22mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	64pF
Number	1 N-channel
Input Capacitance(Ciss)	1.378nF
Gate Charge(Qg)	12.6nC@4.5V
Type	N-Channel

In-Stock: 197

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Qty	Unit Price	Total Amount
1+	$ 0.9805$ 0.7844	$ 0.78
10+	$ 0.7965$ 0.6372	$ 6.37
30+	$ 0.7029$ 0.5624	$ 16.87
100+	$ 0.6125$ 0.4900	$ 49.00
500+	$ 0.5569$ 0.4456	$ 222.80
1,000+	$ 0.5284$ 0.4228	$ 422.80
Standard Packaging2500/Full Reel

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Configuration	Standalone
Drain to Source Voltage	60V
Output Capacitance(Coss)	86pF
Current - Continuous Drain(Id)	30A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Pd - Power Dissipation	34.7W
RDS(on)	22mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	64pF
Number	1 N-channel
Input Capacitance(Ciss)	1.378nF
Gate Charge(Qg)	12.6nC@4.5V
Type	N-Channel