HXY MOSFET IPD30N06S3-24-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Configuration	Standalone
Drain to Source Voltage	60V
Output Capacitance(Coss)	86pF
Current - Continuous Drain(Id)	30A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Pd - Power Dissipation	34.7W
RDS(on)	22mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	64pF
Number	1 N-channel
Input Capacitance(Ciss)	1.378nF
Gate Charge(Qg)	12.6nC@4.5V
Type	N-Channel

In-Stock: 165

165 In stock, ships now

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Qty	Unit Price	Total Amount
5+	$ 0.1295$ 0.1231	$ 0.62
50+	$ 0.1023$ 0.0972	$ 4.86
150+	$ 0.0886$ 0.0842	$ 12.63
500+	$ 0.0784$ 0.0745	$ 37.25
2,500+	$ 0.0702$ 0.0667	$ 166.75
5,000+	$ 0.0661$ 0.0628	$ 314.00
Standard Packaging2500/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Configuration	Standalone
Drain to Source Voltage	60V
Output Capacitance(Coss)	86pF
Current - Continuous Drain(Id)	30A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Pd - Power Dissipation	34.7W
RDS(on)	22mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	64pF
Number	1 N-channel
Input Capacitance(Ciss)	1.378nF
Gate Charge(Qg)	12.6nC@4.5V
Type	N-Channel