HXY MOSFET DMG4800LSDQ-13-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	DMG4800LSDQ-13-HXY
LCSC Part #	C49256432
Packaging	SOP-8
Customer #
Key Attributes	30V 10A 2.5V 2W 12mΩ@10V 2 N-Channel N-Channel SOP-8 Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET DMG4800LSDQ-13-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	SOP-8
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	10A
Output Capacitance(Coss)	160pF
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Pd - Power Dissipation	2W
RDS(on)	12mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	100pF
Number	2 N-Channel
Input Capacitance(Ciss)	910pF
Gate Charge(Qg)	17nC@10V
Type	N-Channel

In-Stock: 140

140 In stock, ships now

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Qty	Unit Price	Total Amount
5+	$ 0.3282$ 0.2626	$ 1.31
50+	$ 0.26$ 0.2080	$ 10.40
150+	$ 0.2307$ 0.1846	$ 27.69
500+	$ 0.1943$ 0.1555	$ 77.75
3,000+	$ 0.178$ 0.1424	$ 427.20
6,000+	$ 0.1683$ 0.1347	$ 808.20
Standard Packaging3000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	SOP-8
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	10A
Output Capacitance(Coss)	160pF
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Pd - Power Dissipation	2W
RDS(on)	12mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	100pF
Number	2 N-Channel
Input Capacitance(Ciss)	910pF
Gate Charge(Qg)	17nC@10V
Type	N-Channel