HXY MOSFET ZXMP3A16N8TA-HXY
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | ZXMP3A16N8TA-HXY |
| LCSC Part # | C49256423 |
| Packaging | SOP-8 |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 5.8A SOP-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOP-8 | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5.8A | |
| Output Capacitance(Coss) | 130pF | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 43mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 520pF | |
| Gate Charge(Qg) | 11nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The ZXMP3A16N8TA utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation down to 2.5V gate voltage. The device is suitable for battery protection or other switching applications.
Features
AI Translation
- VDS = -30V, ID = -5.8A
- RDS(ON) < 55mΩ at VGS = 10V
Applications
AI Translation
- Battery protection
- Load switch
- Uninterruptible power supply
In-Stock: 180
180 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.29 | $ 1.45 |
| 50+ | $ 0.2409 | $ 12.05 |
| 150+ | $ 0.2199 | $ 32.99 |
| 500+ | $ 0.1936 | $ 96.80 |
| 3,000+ | $ 0.1819 | $ 545.70 |
| 6,000+ | $ 0.1749 | $ 1049.40 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOP-8 | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5.8A | |
| Output Capacitance(Coss) | 130pF | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 43mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 520pF | |
| Gate Charge(Qg) | 11nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The ZXMP3A16N8TA utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation down to 2.5V gate voltage. The device is suitable for battery protection or other switching applications.
Features
AI Translation
- VDS = -30V, ID = -5.8A
- RDS(ON) < 55mΩ at VGS = 10V
Applications
AI Translation
- Battery protection
- Load switch
- Uninterruptible power supply
C49256423 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



