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DOINGTER IRLR3636-DO product image
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DOINGTER IRLR3636-DORoHS

Manufacturer
DOINGTERAsian Brands
MPN
IRLR3636-DO
LCSC Part #
C49237747
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 60V 55A TO-252
Datasheetpdf iconDOINGTER IRLR3636-DO
In-Stock: 2,400
2,400 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1304$ 0.65
50+$ 0.1039$ 5.20
150+$ 0.0907$ 13.61
500+$ 0.0807$ 40.35
2,500+$ 0.0727$ 181.75
5,000+$ 0.0688$ 344.00
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage60V
Output Capacitance(Coss)170pF
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation63W
Reverse Transfer Capacitance (Crss@Vds)151pF
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.045nF
Gate Charge(Qg)16nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET utilizes advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • Drain-source voltage (VDS) = 60 V, drain current (ID) = 55 A, on-resistance (RDS(ON)) < 12 mΩ at gate-source voltage (VGS) = 10 V
  • Low gate charge
  • RoHS-compliant devices available
  • Advanced high cell density trench technology for ultra-low RDS(on)
  • Excellent package with superior thermal dissipation

Applications

AI Translation
  • MB/VGA core voltage - switched-mode power supply secondary synchronous rectifier - point-of-load applications - brushless DC motor driver