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Minos MDT20P10D
| Manufacturer | MinosAsian Brands |
| MPN | MDT20P10D |
| LCSC Part # | C49108782 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | 100V P-Channel Power MOSFET |
| Datasheet | Minos MDT20P10D |
| Alternative Parts | 4 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Minos | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 20A | |
| Output Capacitance(Coss) | 81pF | |
| Ciss-Input Capacitance | 2.36nF | |
| Pd - Power Dissipation | 72W | |
| Reverse Transfer Capacitance (Crss) | 67pF | |
| RDS(on) | 70mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 71nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Minos | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 20A | |
| Output Capacitance(Coss) | 81pF | |
| Ciss-Input Capacitance | 2.36nF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 72W | |
| Reverse Transfer Capacitance (Crss) | 67pF | |
| RDS(on) | 70mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 71nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The MDT20P10D, uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications.
Features
AI Translation
- VDS = -100 V, ID = -20 A
- RDS(ON) < 80 mΩ at VGS = -10 V
- RDS(ON) < 90 mΩ at VGS = -4.5 V
- High-density cell design for reduced Rdson
- Fully characterized avalanche voltage and current
- High EAS with excellent stability and consistency
- Superior package with excellent thermal dissipation
Applications
AI Translation
- Power switch applications
- Hard switching and high-frequency circuits
- Uninterruptible power supplies
Every Order Guarantee
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In-Stock: 940
940 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2277$ 0.1936 | $ 0.97 |
| 50+ | $ 0.1783$ 0.1516 | $ 7.58 |
| 150+ | $ 0.1572$ 0.1337 | $ 20.06 |
| 500+ | $ 0.1308$ 0.1112 | $ 55.60 |
| 2,500+ | $ 0.119$ 0.1012 | $ 253.00 |
| 5,000+ | $ 0.112$ 0.0952 | $ 476.00 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Minos | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 20A | |
| Output Capacitance(Coss) | 81pF | |
| Ciss-Input Capacitance | 2.36nF | |
| Pd - Power Dissipation | 72W | |
| Reverse Transfer Capacitance (Crss) | 67pF | |
| RDS(on) | 70mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 71nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Minos | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 20A | |
| Output Capacitance(Coss) | 81pF | |
| Ciss-Input Capacitance | 2.36nF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 72W | |
| Reverse Transfer Capacitance (Crss) | 67pF | |
| RDS(on) | 70mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 71nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The MDT20P10D, uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications.
Features
AI Translation
- VDS = -100 V, ID = -20 A
- RDS(ON) < 80 mΩ at VGS = -10 V
- RDS(ON) < 90 mΩ at VGS = -4.5 V
- High-density cell design for reduced Rdson
- Fully characterized avalanche voltage and current
- High EAS with excellent stability and consistency
- Superior package with excellent thermal dissipation
Applications
AI Translation
- Power switch applications
- Hard switching and high-frequency circuits
- Uninterruptible power supplies
C49108782 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |