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ElecSuper NTMFS5C628NLT1G(ES) product image
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ElecSuper NTMFS5C628NLT1G(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
NTMFS5C628NLT1G(ES)
LCSC Part #
C49108756
Packaging
PDFN-8L(5x6)
Customer #
Key Attributes
MOSFET N-CH 60V 190A PDFN-8L(5x6)
Datasheetpdf iconElecSuper NTMFS5C628NLT1G(ES)
In-Stock: 4,834
4,834 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.5577$ 0.56
10+$ 0.4524$ 4.52
30+$ 0.4005$ 12.02
100+$ 0.347$ 34.70
500+$ 0.3162$ 158.10
1,000+$ 0.3$ 300.00
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingPDFN-8L(5x6)
Drain to Source Voltage60V
Output Capacitance(Coss)2.2nF
Current - Continuous Drain(Id)190A
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation156W
RDS(on)1.9mΩ@10V;2.6mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)135pF
Number1 N-channel
Input Capacitance(Ciss)5.44nF
Gate Charge(Qg)102nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

NTMFS5C628NLT1G(ES) is an N-channel enhancement-mode MOSFET. Utilizing advanced shielded gate trench technology and design, it delivers excellent RDS(ON) at low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product NTMFS5C628NLT1G(ES) is lead-free.

Features

AI Translation
  • 60V, RDS(ON) = 1.9 mΩ (typical), VGS = 10 V
  • RDS(ON) = 2.6 mΩ (typical), VGS = 4.5 V
  • High-density cell design for low RDS(ON)
  • Halogen-free material
  • Robust and durable
  • Avalanche-rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop computers
  • DC/DC conversion