JSMSEMI IRFB4310PBF
| Manufacturer | JSMSEMIAsian Brands |
| MPN | IRFB4310PBF |
| LCSC Part # | C49015406 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | MOSFET 100V 120A TO-220 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 120A | |
| Output Capacitance(Coss) | 1.25nF | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 227W | |
| Reverse Transfer Capacitance (Crss@Vds) | 47pF | |
| RDS(on) | 3.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.9nF | |
| Gate Charge(Qg) | 117nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Low intrinsic capacitance
- Excellent switching characteristics
- Extended safe operating area
- Unparalleled gate charge: Qg = 117nC (typical)
- BVDSS = 100V, ID = 120A
- RDS(on): 3.3mΩ (typical) @VG = 10V
- 100% avalanche tested
Applications
AI Translation
- Laptop power management
- Battery-powered systems
- DC/DC converters
- Load switches
In-Stock: 1,288
1,288 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.1895 | $ 1.19 |
| 10+ | $ 0.9835 | $ 9.84 |
| 50+ | $ 0.8708 | $ 43.54 |
| 100+ | $ 0.742 | $ 74.20 |
| 500+ | $ 0.6857 | $ 342.85 |
| 1,000+ | $ 0.66 | $ 660.00 |
Standard Packaging50/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 120A | |
| Output Capacitance(Coss) | 1.25nF | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 227W | |
| Reverse Transfer Capacitance (Crss@Vds) | 47pF | |
| RDS(on) | 3.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.9nF | |
| Gate Charge(Qg) | 117nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Low intrinsic capacitance
- Excellent switching characteristics
- Extended safe operating area
- Unparalleled gate charge: Qg = 117nC (typical)
- BVDSS = 100V, ID = 120A
- RDS(on): 3.3mΩ (typical) @VG = 10V
- 100% avalanche tested
Applications
AI Translation
- Laptop power management
- Battery-powered systems
- DC/DC converters
- Load switches
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



