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HXY MOSFET RGTH00TS65GC13-HXY
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | RGTH00TS65GC13-HXY |
| LCSC Part # | C49003456 |
| Packaging | TO-247 |
| Customer # | |
| Key Attributes | Insulated Gate Bipolar Transistor |
| Datasheet | HXY MOSFET RGTH00TS65GC13-HXY |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-247 | |
| Pd - Power Dissipation | 250W | |
| Td(off) | 110ns | |
| Td(on) | 17ns | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 13pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@250uA | |
| Operating Temperature | -40℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 2.1V@50A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 56ns | |
| Switching Energy(Eoff) | 510uJ | |
| Turn-On Energy (Eon) | 1.35mJ | |
| Input Capacitance(Cies) | 1.916nF | |
| Output Capacitance(Coes) | 139pF | |
| Gate Charge(Qg) | 71nC@15V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-247 | |
| Pd - Power Dissipation | 250W | |
| Td(off) | 110ns | |
| Td(on) | 17ns | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 13pF | |
| IGBT Type | - |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@250uA | |
| Operating Temperature | -40℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 2.1V@50A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 56ns | |
| Switching Energy(Eoff) | 510uJ | |
| Turn-On Energy (Eon) | 1.35mJ | |
| Input Capacitance(Cies) | 1.916nF | |
| Output Capacitance(Coes) | 139pF | |
| Gate Charge(Qg) | 71nC@15V |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- 650V, 50A IGBT
- Positive temperature coefficient of Vcesat enables easy paralleling
- Low EMI
- Low gate charge
- Low saturation voltage Vcesat
- Maximum junction temperature Tvjmax = 175°C
Applications
AI Translation
- Uninterruptible power supply
- Electric vehicle
- Charger
- Solar string inverter
- Energy storage inverter
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-247 | |
| Pd - Power Dissipation | 250W | |
| Td(off) | 110ns | |
| Td(on) | 17ns | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 13pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@250uA | |
| Operating Temperature | -40℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 2.1V@50A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 56ns | |
| Switching Energy(Eoff) | 510uJ | |
| Turn-On Energy (Eon) | 1.35mJ | |
| Input Capacitance(Cies) | 1.916nF | |
| Output Capacitance(Coes) | 139pF | |
| Gate Charge(Qg) | 71nC@15V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-247 | |
| Pd - Power Dissipation | 250W | |
| Td(off) | 110ns | |
| Td(on) | 17ns | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 13pF | |
| IGBT Type | - |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@250uA | |
| Operating Temperature | -40℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 2.1V@50A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 56ns | |
| Switching Energy(Eoff) | 510uJ | |
| Turn-On Energy (Eon) | 1.35mJ | |
| Input Capacitance(Cies) | 1.916nF | |
| Output Capacitance(Coes) | 139pF | |
| Gate Charge(Qg) | 71nC@15V |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- 650V, 50A IGBT
- Positive temperature coefficient of Vcesat enables easy paralleling
- Low EMI
- Low gate charge
- Low saturation voltage Vcesat
- Maximum junction temperature Tvjmax = 175°C
Applications
AI Translation
- Uninterruptible power supply
- Electric vehicle
- Charger
- Solar string inverter
- Energy storage inverter
C49003456 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| FGH50T65SQD-F155-HXY | HXY MOSFET | Similar | TO-247 | 14 | $3.2888 $3.6542 | ||
| AFGHL50T65SQD-HXY | HXY MOSFET | Similar | TO-247 | 17 | $2.5897 $5.1793 | ||
| IGW50N65H5AXKSA1-HXY | HXY MOSFET | Similar | TO-247 | 19 | $4.2750 $5.3437 | ||
| RGS00TS65HRC11-HXY | HXY MOSFET | Similar | TO-247 | 20 | $2.7286 $5.4572 | ||
| IXYH75N65C3H1-HXY | HXY MOSFET | Similar | TO-247 | 25 | $5.9697 $11.9394 |