- Pinout
- Footprint
Images for reference only
EDA ModelsEasyEDA
DOINGTER DOZ4822
| Manufacturer | DOINGTERAsian Brands |
| MPN | DOZ4822 |
| LCSC Part # | C48542693 |
| Packaging | DFN3x3-8D |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 30V 10A DFN3x3-8D |
| Datasheet | DOINGTER DOZ4822 |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | DFN3x3-8D | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 10A | |
| Ciss-Input Capacitance | 450pF | |
| Pd - Power Dissipation | 15.6W | |
| Reverse Transfer Capacitance (Crss) | 38pF | |
| RDS(on) | 25mΩ@10V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 5.2nC@15V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | DFN3x3-8D | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 10A | |
| Ciss-Input Capacitance | 450pF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 15.6W | |
| Reverse Transfer Capacitance (Crss) | 38pF | |
| RDS(on) | 25mΩ@10V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 5.2nC@15V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This dual N-channel MOSFET utilizes advanced trench technology and design to achieve low gate charge while delivering excellent RDS(ON) performance. It is suitable for a wide range of applications.
Features
AI Translation
- RDS(ON) < 25 mΩ (typical: 18 mΩ) at VDS = 30 V, ID = 10 A, VGS = 10 V
- Low gate charge
- Eco-friendly devices available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- Thermally enhanced package
- Moisture Sensitivity Level 3 (MSL3)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 4,685
4,685 In stock, ships now
Not recommended for new designs
Once stock is depleted, this item will be marked as "Out of Stock."
Notify Me
Minimum: 5Multiple: 5Sales Unit: Piece
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.0811 | $ 0.41 |
| 50+ | $ 0.0735 | $ 3.68 |
| 150+ | $ 0.0698 | $ 10.47 |
| 500+ | $ 0.067 | $ 33.50 |
| 2,500+ | $ 0.0535 | $ 133.75 |
| 5,000+ | $ 0.0523 | $ 261.50 |
Standard Packaging5000/Full Reel | ||
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | DFN3x3-8D | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 10A | |
| Ciss-Input Capacitance | 450pF | |
| Pd - Power Dissipation | 15.6W | |
| Reverse Transfer Capacitance (Crss) | 38pF | |
| RDS(on) | 25mΩ@10V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 5.2nC@15V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | DFN3x3-8D | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 10A | |
| Ciss-Input Capacitance | 450pF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 15.6W | |
| Reverse Transfer Capacitance (Crss) | 38pF | |
| RDS(on) | 25mΩ@10V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 5.2nC@15V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This dual N-channel MOSFET utilizes advanced trench technology and design to achieve low gate charge while delivering excellent RDS(ON) performance. It is suitable for a wide range of applications.
Features
AI Translation
- RDS(ON) < 25 mΩ (typical: 18 mΩ) at VDS = 30 V, ID = 10 A, VGS = 10 V
- Low gate charge
- Eco-friendly devices available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- Thermally enhanced package
- Moisture Sensitivity Level 3 (MSL3)
C48542693 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| ZD035DNG | DOINGTER | Similar | DFN-8D(3x3) | 390 | $ 0.0828 | ||
| DOZ20DN06T | DOINGTER | Similar | DFN-8D(3x3) | 1,470 | $ 0.1524 | ||
| ZD013DTG | DOINGTER | Similar | DFN-8D(3x3) | 4,635 | $ 0.13 | ||
| DOZ12DN04 | DOINGTER | Similar | DFN3x3-8D | 1,540 | $ 0.0826 | ||
| DOZ20DN04 | DOINGTER | Similar | DFN-8D(3x3) | 4,995 | $ 0.1093 |