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VBsemi Elec CSD16327Q3T-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | CSD16327Q3T-VB |
| LCSC Part # | C47993858 |
| Packaging | DFN3x3-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 20V 100A DFN3x3-8 |
| Datasheet | VBsemi Elec CSD16327Q3T-VB |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | DFN3x3-8 | |
| Output Capacitance(Coss) | 1.725nF | |
| Ciss-Input Capacitance | 6.5nF | |
| Pd - Power Dissipation | 250W | |
| Configuration | - | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 100A | |
| Reverse Transfer Capacitance (Crss) | 970pF | |
| RDS(on) | 2.5mΩ@2.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 171nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | DFN3x3-8 | |
| Output Capacitance(Coss) | 1.725nF | |
| Ciss-Input Capacitance | 6.5nF | |
| Pd - Power Dissipation | 250W | |
| Configuration | - | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+175℃ |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 100A | |
| Reverse Transfer Capacitance (Crss) | 970pF | |
| RDS(on) | 2.5mΩ@2.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 171nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | DFN3x3-8 | |
| Output Capacitance(Coss) | 1.725nF | |
| Ciss-Input Capacitance | 6.5nF | |
| Pd - Power Dissipation | 250W | |
| Configuration | - | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 100A | |
| Reverse Transfer Capacitance (Crss) | 970pF | |
| RDS(on) | 2.5mΩ@2.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 171nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | DFN3x3-8 | |
| Output Capacitance(Coss) | 1.725nF | |
| Ciss-Input Capacitance | 6.5nF | |
| Pd - Power Dissipation | 250W | |
| Configuration | - | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+175℃ |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 100A | |
| Reverse Transfer Capacitance (Crss) | 970pF | |
| RDS(on) | 2.5mΩ@2.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 171nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
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C47993858 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |