VBsemi Elec IRFR9110TRR-VB
| Hersteller | VBsemi ElecAsian Brands |
| Herst.-Teilenr. | IRFR9110TRR-VB |
| LCSC-Nr. | C47993795 |
| Verp. | TO-252 |
| Kundennummer | |
| Hauptmerkm. | MOSFET P-CH 100V 8.8A TO-252 |
| Datenblatt | VBsemi Elec IRFR9110TRR-VB |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-252 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 8.8A | |
| Output Capacitance(Coss) | 65pF | |
| Ciss-Input Capacitance | 1.055nF | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss) | 41pF | |
| RDS(on) | 280mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 34.8nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-252 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 8.8A | |
| Output Capacitance(Coss) | 65pF | |
| Ciss-Input Capacitance | 1.055nF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss) | 41pF | |
| RDS(on) | 280mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 34.8nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Compliant with halogen-free requirements as defined by IEC 61249-2-21
- Trench power MOSFET
- 100% Rg and UIS tested
- Compliant with RoHS Directive 2002/95/EC
Anwendungen
KI-Übersetzung
- Power Switches - DC-DC Converters
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-252 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 8.8A | |
| Output Capacitance(Coss) | 65pF | |
| Ciss-Input Capacitance | 1.055nF | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss) | 41pF | |
| RDS(on) | 280mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 34.8nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-252 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 8.8A | |
| Output Capacitance(Coss) | 65pF | |
| Ciss-Input Capacitance | 1.055nF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss) | 41pF | |
| RDS(on) | 280mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 34.8nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Compliant with halogen-free requirements as defined by IEC 61249-2-21
- Trench power MOSFET
- 100% Rg and UIS tested
- Compliant with RoHS Directive 2002/95/EC
Anwendungen
KI-Übersetzung
- Power Switches - DC-DC Converters
C47993795 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



