- Rozmieszczenie wyprowadzeń
- Footprint
Zdjęcia poglądowe
Modele EDAEasyEDA
VBsemi Elec SIS990DN-T1-GE3-VB
| Producent | VBsemi ElecAsian Brands |
| Nr części prod. | SIS990DN-T1-GE3-VB |
| Nr LCSC | C47993742 |
| Opak. | DFN3x3-8 |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 100V 12.1A DFN3x3-8 |
| Karta Katalogowa | VBsemi Elec SIS990DN-T1-GE3-VB |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | DFN3x3-8 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 73pF | |
| Current - Continuous Drain(Id) | 12.1A | |
| Ciss-Input Capacitance | 250pF | |
| Pd - Power Dissipation | 25W | |
| Reverse Transfer Capacitance (Crss) | 7pF | |
| RDS(on) | 71mΩ@10V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 8nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | DFN3x3-8 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 73pF | |
| Current - Continuous Drain(Id) | 12.1A | |
| Ciss-Input Capacitance | 250pF |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 25W | |
| Reverse Transfer Capacitance (Crss) | 7pF | |
| RDS(on) | 71mΩ@10V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 8nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Trench power MOSFET
- 100% Rg and UIS tested
Zastosowania
Tłumaczenie AI
- DC/DC conversion
- Primary-side switching
- Synchronous rectification
- Industrial applications
- 48V battery monitoring
- LED driver
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | DFN3x3-8 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 73pF | |
| Current - Continuous Drain(Id) | 12.1A | |
| Ciss-Input Capacitance | 250pF | |
| Pd - Power Dissipation | 25W | |
| Reverse Transfer Capacitance (Crss) | 7pF | |
| RDS(on) | 71mΩ@10V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 8nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | DFN3x3-8 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 73pF | |
| Current - Continuous Drain(Id) | 12.1A | |
| Ciss-Input Capacitance | 250pF |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 25W | |
| Reverse Transfer Capacitance (Crss) | 7pF | |
| RDS(on) | 71mΩ@10V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 8nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Trench power MOSFET
- 100% Rg and UIS tested
Zastosowania
Tłumaczenie AI
- DC/DC conversion
- Primary-side switching
- Synchronous rectification
- Industrial applications
- 48V battery monitoring
- LED driver
C47993742 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |