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ST STGWA40M120DF3RoHS

Manufacturer
ST
MPN
STGWA40M120DF3
LCSC Part #
C472633
Packaging
TO-247
Customer #
Key Attributes
IGBT 1.2kV 80A TO-247
Datasheetpdf iconST STGWA40M120DF3
In-Stock: 85
85 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 5.3286$ 5.33
10+$ 4.7573$ 47.57
30+$ 4.4172$ 132.52
90+$ 4.0721$ 366.49
360+$ 3.9143$ 1409.15
1,080+$ 3.8427$ 4150.12
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerST
PackagingTO-247
Td(off)140ns
Pd - Power Dissipation468W
Td(on)35ns
Operating Temperature-55℃~+175℃@(Tj)
Current - Collector(Ic)80A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)95pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@2mA
Vce Saturation(VCE(sat))2.3V@40A,15V
Reverse Recovery Time(trr)355ns
Switching Energy(Eoff)2.25mJ
Turn-On Energy (Eon)1.5mJ
Input Capacitance(Cies)2.5nF
Output Capacitance(Coes)275pF
Gate Charge(Qg)125nC
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Features

AI Translation
  • 10 μs of short-circuit withstand time
  • VCE(sat) = 1.85 V (typ.) @ IC = 40 A
  • Tight parameters distribution
  • Safer paralleling
  • Low thermal resistance
  • Soft and fast recovery antiparallel diode

Applications

AI Translation
  • Industrial drives
  • UPS
  • Solar
  • Welding