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ST STGD6M65DF2 product image
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ST STGD6M65DF2RoHS

Manufacturer
ST
MPN
STGD6M65DF2
LCSC Part #
C472580
Packaging
TO-252
Customer #
Key Attributes
88W 12A 650V FS (Field Stop) TO-252 Single IGBTs RoHS
Datasheetpdf iconST STGD6M65DF2

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerST
PackagingTO-252
Td(off)90ns
Pd - Power Dissipation88W
Td(on)15ns
Operating Temperature-55℃~+175℃@(Tj)
Current - Collector(Ic)12A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)11pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@250uA
Vce Saturation(VCE(sat))2V@6A,15V
Reverse Recovery Time(trr)140ns
Switching Energy(Eoff)200uJ
Turn-On Energy (Eon)36uJ
Input Capacitance(Cies)-
Output Capacitance(Coes)31pF
Gate Charge(Qg)21.2nC
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece
In-Stock: 2,660
2,660 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.269$ 1.27
10+$ 1.0385$ 10.39
30+$ 0.9127$ 27.38
100+$ 0.7692$ 76.92
500+$ 0.7063$ 353.15
1,000+$ 0.6773$ 677.30
Standard Packaging2500/Full Reel
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