ElecSuper IRF9310TRPBF(ES)
| Manufacturer | ElecSuperAsian Brands |
| MPN | IRF9310TRPBF(ES) |
| LCSC Part # | C46970793 |
| Packaging | SOP-8 |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 21A SOP-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ElecSuper | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 21A | |
| Output Capacitance(Coss) | 692pF | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Pd - Power Dissipation | 4.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 561pF | |
| RDS(on) | 8.3mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.91nF | |
| Gate Charge(Qg) | 78nC@10V | |
| Type | P-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
IRF9310TRPBF(ES) is a P-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it achieves excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product IRF9310TRPBF(ES) is lead-free.
Features
AI Translation
- -30V, RDS(ON) = 4.1 mΩ (typ), VGS = -10V
- RDS(ON) = 6.4 mΩ (typ), VGS = -4.5V
- High-density cell design for low RDS(ON)
- Halogen-free material
- Robust and reliable
- Avalanche-rated
- Low leakage current
Applications
AI Translation
- PWM applications
- Load switching
- Power management for portable/desktop PCs
- DC/DC conversion
In-Stock: 175
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.3512 | $ 1.76 |
| 50+ | $ 0.2774 | $ 13.87 |
| 150+ | $ 0.2458 | $ 36.87 |
| 500+ | $ 0.2064 | $ 103.20 |
| 3,000+ | $ 0.1888 | $ 566.40 |
| 6,000+ | $ 0.1783 | $ 1069.80 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ElecSuper | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 21A | |
| Output Capacitance(Coss) | 692pF | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Pd - Power Dissipation | 4.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 561pF | |
| RDS(on) | 8.3mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.91nF | |
| Gate Charge(Qg) | 78nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
IRF9310TRPBF(ES) is a P-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it achieves excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product IRF9310TRPBF(ES) is lead-free.
Features
AI Translation
- -30V, RDS(ON) = 4.1 mΩ (typ), VGS = -10V
- RDS(ON) = 6.4 mΩ (typ), VGS = -4.5V
- High-density cell design for low RDS(ON)
- Halogen-free material
- Robust and reliable
- Avalanche-rated
- Low leakage current
Applications
AI Translation
- PWM applications
- Load switching
- Power management for portable/desktop PCs
- DC/DC conversion
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

