VISHAY SI7114DN-T1-E3
| Manufacturer | |
| MPN | SI7114DN-T1-E3 |
| LCSC Part # | C467907 |
| Packaging | PowerPAK1212-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 11.7A PowerPAK1212-8 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAK1212-8 | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 11.7A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 1.5W | |
| RDS(on) | 7.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 19nC@4.5V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAK1212-8 | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 11.7A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 1.5W | |
| RDS(on) | 7.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 19nC@4.5V | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
N-Channel 30-V (D-S) Fast Switching MOSFET
Features
AI Translation
- Halogen-free Option Available
- TrenchFET Gen II Power MOSFET
- New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile
- 100 % Rg Tested
Applications
AI Translation
- Synchronous Rectification
In-Stock: 2,695
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.5456$ 1.4684 | $ 1.47 |
| 10+ | $ 1.2837$ 1.2196 | $ 12.20 |
| 30+ | $ 1.1405$ 1.0835 | $ 32.51 |
| 100+ | $ 0.9778$ 0.9290 | $ 92.90 |
| 500+ | $ 0.9062$ 0.8609 | $ 430.45 |
| 1,000+ | $ 0.8737$ 0.8301 | $ 830.10 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAK1212-8 | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 11.7A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 1.5W | |
| RDS(on) | 7.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 19nC@4.5V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAK1212-8 | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 11.7A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 1.5W | |
| RDS(on) | 7.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 19nC@4.5V | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
N-Channel 30-V (D-S) Fast Switching MOSFET
Features
AI Translation
- Halogen-free Option Available
- TrenchFET Gen II Power MOSFET
- New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile
- 100 % Rg Tested
Applications
AI Translation
- Synchronous Rectification
C467907 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



