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onsemi SBC847CDW1T1GRoHS

Manufacturer
MPN
SBC847CDW1T1G
LCSC Part #
C464115
Packaging
SOT-363
Customer #
Key Attributes
TRANS NPN 30V 100mA SOT-363
Datasheetpdf icononsemi SBC847CDW1T1G
In-Stock: 910
910 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.0675$ 0.34
50+$ 0.0664$ 3.32
150+$ 0.0656$ 9.84
500+$ 0.0649$ 32.45
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays
Manufactureronsemi
PackagingSOT-363
Current - Collector Cutoff5uA
DC Current Gain270
Pd - Power Dissipation380mW
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO6V
Transition frequency(fT)100MHz
Vce Saturation(VCE(sat))250mV
typeNPN
Number2 NPN
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications.

Features

AI Translation
  • S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant