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onsemi FDMC7660DCRoHS

Manufacturer
onsemi
MPN
FDMC7660DC
LCSC Part #
C463948
Packaging
DualCool-33-8
Customer #
Key Attributes
30V 40A 1.2V 78W 2.2mΩ@10V 1 N-channel DualCool-33-8 Single FETs, MOSFETs RoHS
Datasheetpdf icononsemi FDMC7660DC
In-Stock: 17
17 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.8023$ 1.80
10+$ 1.5372$ 15.37
30+$ 1.3718$ 41.15
100+$ 1.1501$ 115.01
500+$ 1.073$ 536.50
1,000+$ 1.0409$ 1040.90
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingDualCool-33-8
Drain to Source Voltage30V
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation78W
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)2.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.17nF
Gate Charge(Qg)76nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET is manufactured using the advanced PowerTrench® process. Combining the advantages of silicon technology and Dual Cool™ packaging, it achieves extremely low on-resistance rDS(on) while maintaining excellent switching performance, along with an exceptionally low junction-to-ambient thermal resistance.

Features

AI Translation
  • Dual Cool™ top-side cooled PQFN package
  • Max r<sub>DS(on)</sub> = 2.2 mΩ at V<sub>GS</sub> = 10 V, I<sub>D</sub> = 22 A
  • Max r<sub>DS(on)</sub> = 3.3 mΩ at V<sub>GS</sub> = 4.5 V, I<sub>D</sub> = 18 A
  • High-performance technology for ultra-low r<sub>DS(on)</sub>
  • Synchronous FET Schottky body diode
  • RoHS compliant

Applications

AI Translation
  • Synchronous rectifier for DC/DC converters
  • Telecom secondary-side rectification
  • High-end server/workstation