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onsemi MUN5316DW1T1GRoHS

Manufacturer
MPN
MUN5316DW1T1G
LCSC Part #
C463099
Packaging
SOT-363
Customer #
Key Attributes
TRANS PREBIAS NPN 50V SOT-363
Datasheetpdf icononsemi MUN5316DW1T1G
In-Stock: 405
405 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.1096$ 0.0362$ 0.18
50+$ 0.0877$ 0.0290$ 1.45
150+$ 0.0768$ 0.0254$ 3.81
500+$ 0.0685$ 0.0227$ 11.35
3,000+$ 0.062$ 0.0205$ 61.50
6,000+$ 0.0587$ 0.0194$ 116.40
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased
Manufactureronsemi
PackagingSOT-363
DC Current Gain160
Output Voltage(VO(on))200mV
Input Resistor6.1kΩ
Number1 NPN, 1 PNP Pre-Biased
Pd - Power Dissipation187mW
Input Voltage (VI(on)@Ic,Vce)900mV
Voltage - Input(Max)(VI(off))600mV
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
Operating Temperature-55℃~+150℃

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Features

AI Translation
  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant