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onsemi FDMS2734
| Manufacturer | |
| MPN | FDMS2734 |
| LCSC Part # | C462740 |
| Packaging | Power-56-8 |
| Customer # | |
| Key Attributes | 78W 250V 14A 122mΩ@10V 1 N-channel N-Channel Power-56-8 Single FETs, MOSFETs RoHS |
| Datasheet | onsemi FDMS2734 |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | Power-56-8 | |
| Output Capacitance(Coss) | 80pF | |
| Ciss-Input Capacitance | 2.365nF | |
| Pd - Power Dissipation | 78W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Current - Continuous Drain(Id) | 14A | |
| Reverse Transfer Capacitance (Crss) | 40pF | |
| RDS(on) | 122mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 42nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | Power-56-8 | |
| Output Capacitance(Coss) | 80pF | |
| Ciss-Input Capacitance | 2.365nF | |
| Pd - Power Dissipation | 78W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 14A | |
| Reverse Transfer Capacitance (Crss) | 40pF | |
| RDS(on) | 122mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 42nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
UltraFET devices combine multiple features to deliver superior efficiency in power conversion applications. These devices are optimized for on-resistance (rDS(on)), low ESR, low total gate charge, and low Miller gate charge, making them ideal for high-frequency DC-DC converters.
Features
AI Translation
- Maximum on-resistance RDS(ON) of 122 mΩ at VGS = 10 V, ID = 2.8 A
- Maximum on-resistance RDS(ON) of 130 mΩ at VGS = 6 V, ID = 1.7 A
- Low Miller charge
- Efficiency optimized at high frequency
- RoHS compliant
Applications
AI Translation
- DC-DC conversion
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 7.3035 | $ 7.30 |
| 10+ | $ 6.5793 | $ 65.79 |
| 30+ | $ 5.8081 | $ 174.24 |
| 100+ | $ 5.3739 | $ 537.39 |
| 500+ | $ 5.173 | $ 2586.50 |
| 1,000+ | $ 5.0823 | $ 5082.30 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | Power-56-8 | |
| Output Capacitance(Coss) | 80pF | |
| Ciss-Input Capacitance | 2.365nF | |
| Pd - Power Dissipation | 78W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Current - Continuous Drain(Id) | 14A | |
| Reverse Transfer Capacitance (Crss) | 40pF | |
| RDS(on) | 122mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 42nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | Power-56-8 | |
| Output Capacitance(Coss) | 80pF | |
| Ciss-Input Capacitance | 2.365nF | |
| Pd - Power Dissipation | 78W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 14A | |
| Reverse Transfer Capacitance (Crss) | 40pF | |
| RDS(on) | 122mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 42nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
UltraFET devices combine multiple features to deliver superior efficiency in power conversion applications. These devices are optimized for on-resistance (rDS(on)), low ESR, low total gate charge, and low Miller gate charge, making them ideal for high-frequency DC-DC converters.
Features
AI Translation
- Maximum on-resistance RDS(ON) of 122 mΩ at VGS = 10 V, ID = 2.8 A
- Maximum on-resistance RDS(ON) of 130 mΩ at VGS = 6 V, ID = 1.7 A
- Low Miller charge
- Efficiency optimized at high frequency
- RoHS compliant
Applications
AI Translation
- DC-DC conversion
C462740 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| FDMS2734-VB | VBsemi Elec | Similar | PDFN-8L(5x6) | 5 | $1.3422 $1.4128 | ||
| BSC16DN25NS3 G-VB | VBsemi Elec | Similar | PDFN-8L(5x6) | 1 | $2.2693 $2.3887 | ||
| IRFH5025TRPBF-VB | VBsemi Elec | Similar | PDFN-8L(5x6) | 16 | $1.3473 $1.4182 | ||
| HAT2193WP-VB | VBsemi Elec | Similar | PDFN-8L(5x6) | 5 | $2.1041 $2.2148 | ||
| SI7434DP-VB | VBsemi Elec | Similar | PDFN-8L(5x6) | 5 | $2.1041 $2.2148 |