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MDD(Microdiode Semiconductor) MDD60N04D
| Manufacturer | MDD(Microdiode Semiconductor)Asian Brands |
| MPN | MDD60N04D |
| LCSC Part # | C45990958 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET N-CH 40V 60A TO-252 |
| Datasheet |  MDD(Microdiode Semiconductor) MDD60N04D |
| Alternative Parts | 2 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MDD(Microdiode Semiconductor) | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 60A | |
| Output Capacitance(Coss) | 165pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 114W | |
| RDS(on) | 5.7mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 155pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.33nF | |
| Gate Charge(Qg) | 48nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MDD(Microdiode Semiconductor) | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 60A | |
| Output Capacitance(Coss) | 165pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 114W | |
| RDS(on) | 5.7mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 155pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.33nF | |
| Gate Charge(Qg) | 48nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET is manufactured using MDD's advanced power trench technology. The process is optimized to minimize on-resistance while maintaining excellent switching performance through a best-in-class soft body diode.
Features
AI Translation
- Maximum R<sub>DS(on)</sub> = 7 mΩ at V<sub>GS</sub> = 10 V, I<sub>D</sub> = 30 A
- Ultra-low reverse recovery charge Q<sub>g</sub>
- 100% UIS tested
- 100% dV<sub>DS</sub> tested
Applications
AI Translation
- Power management in telecom and industrial automation
- Motor drives and uninterruptible power supplies
- Current switching in DC/DC and AC/DC (synchronous rectification) subsystems
- Load switches
In-Stock: 3,005
3,005 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1757$ 0.1705 | $ 0.85 |
| 50+ | $ 0.1377$ 0.1336 | $ 6.68 |
| 150+ | $ 0.1214$ 0.1178 | $ 17.67 |
| 500+ | $ 0.1011$ 0.0981 | $ 49.05 |
| 2,500+ | $ 0.0921$ 0.0894 | $ 223.50 |
| 5,000+ | $ 0.0867$ 0.0841 | $ 420.50 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MDD(Microdiode Semiconductor) | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 60A | |
| Output Capacitance(Coss) | 165pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 114W | |
| RDS(on) | 5.7mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 155pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.33nF | |
| Gate Charge(Qg) | 48nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MDD(Microdiode Semiconductor) | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 60A | |
| Output Capacitance(Coss) | 165pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 114W | |
| RDS(on) | 5.7mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 155pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.33nF | |
| Gate Charge(Qg) | 48nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET is manufactured using MDD's advanced power trench technology. The process is optimized to minimize on-resistance while maintaining excellent switching performance through a best-in-class soft body diode.
Features
AI Translation
- Maximum R<sub>DS(on)</sub> = 7 mΩ at V<sub>GS</sub> = 10 V, I<sub>D</sub> = 30 A
- Ultra-low reverse recovery charge Q<sub>g</sub>
- 100% UIS tested
- 100% dV<sub>DS</sub> tested
Applications
AI Translation
- Power management in telecom and industrial automation
- Motor drives and uninterruptible power supplies
- Current switching in DC/DC and AC/DC (synchronous rectification) subsystems
- Load switches
C45990958 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| MDDG10R08D | MDD(Microdiode Semiconductor) | TO-252 | 1,980 | $0.2331 $0.2403 | ||
| MDD68N10D | MDD(Microdiode Semiconductor) | TO-252 | 1,880 | $0.3221 $0.332 |