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ST STT6N3LLH6 product image
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ST STT6N3LLH6RoHS

Manufacturer
ST
MPN
STT6N3LLH6
LCSC Part #
C457495
Packaging
SOT-23-6L
Customer #
Key Attributes
MOSFET N-CH 30V 6A SOT-23-6L
Datasheetpdf iconST STT6N3LLH6

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingSOT-23-6L
Drain to Source Voltage30V
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)31pF
RDS(on)36mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)283pF
Gate Charge(Qg)3.6nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This device is an N-channel Power MOSFET developed using the 6th generation of STripFET DeepGATE technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Features

AI Translation
  • RDS(on)*Qg industry benchmark
  • Extremely low on-resistance RDS(on)
  • High avalanche ruggedness
  • Low gate drive power losses

Applications

AI Translation
  • Switching applications
In-Stock: 2,156
2,156 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.3427$ 0.34
10+$ 0.2972$ 2.97
30+$ 0.2761$ 8.28
100+$ 0.2518$ 25.18
500+$ 0.242$ 121.00
1,000+$ 0.2355$ 235.50
Standard Packaging3000/Full Reel
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