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ST STW70N60M2RoHS

Manufacturer
ST
MPN
STW70N60M2
LCSC Part #
C457473
Packaging
TO-247
Customer #
Key Attributes
MOSFET N-CH 650V 68A TO-247
Datasheetpdf iconST STW70N60M2
In-Stock: 313
313 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 3.839$ 3.84
10+$ 3.3841$ 33.84
30+$ 2.8951$ 86.85
100+$ 2.6222$ 262.22
500+$ 2.4971$ 1248.55
1,000+$ 2.4402$ 2440.20
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-247
Drain to Source Voltage650V
Current - Continuous Drain(Id)68A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation450W
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)40mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.2nF
Gate Charge(Qg)118nC@480V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Features

AI Translation
  • Extremely low gate charge
  • Excellent output capacitance (Coss) profile
  • 100% avalanche tested
  • Zener-protected

Applications

AI Translation
  • Switching applications