VBsemi Elec SI7469DP-T1-GE3-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | SI7469DP-T1-GE3-VB |
| LCSC Part # | C45662508 |
| Packaging | DFN-8(5x6) |
| Customer # | |
| Key Attributes | MOSFET 60V 36A DFN-8(5x6) |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | DFN-8(5x6) | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 310pF | |
| Current - Continuous Drain(Id) | 36A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 68W | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| RDS(on) | 28.8mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.6nF | |
| Gate Charge(Qg) | 65nC@10V | |
| Type | P-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- TrenchFET power MOSFET
- 100% Rg and UIS tested
- RoHS compliant
- Halogen-free
- P-channel MOSFET
Applications
AI Translation
- OR-ing server
In-Stock: 43
43 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.246$ 1.1837 | $ 1.18 |
| 10+ | $ 1.0297$ 0.9783 | $ 9.78 |
| 30+ | $ 0.9126$ 0.8670 | $ 26.01 |
| 100+ | $ 0.7776$ 0.7388 | $ 73.88 |
| 500+ | $ 0.719$ 0.6831 | $ 341.55 |
| 1,000+ | $ 0.6914$ 0.6569 | $ 656.90 |
Standard Packaging5000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | DFN-8(5x6) | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 310pF | |
| Current - Continuous Drain(Id) | 36A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 68W | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| RDS(on) | 28.8mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.6nF | |
| Gate Charge(Qg) | 65nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- TrenchFET power MOSFET
- 100% Rg and UIS tested
- RoHS compliant
- Halogen-free
- P-channel MOSFET
Applications
AI Translation
- OR-ing server
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



