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Infineon IKW75N65EL5RoHS

Manufacturer
Infineon
MPN
IKW75N65EL5
LCSC Part #
C454251
Packaging
TO-247-3
Customer #
Key Attributes
Low VcE(sat) IGBT in TRENCHSTOP 5 technology copacked with RAPID 1 fast and soft antiparallel diode
Datasheetpdf iconInfineon IKW75N65EL5
In-Stock: 52
52 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 5.8364$ 5.84
10+$ 5.2098$ 52.10
30+$ 4.8387$ 145.16
90+$ 4.4611$ 401.50
510+$ 4.287$ 2186.37
990+$ 4.2088$ 4166.71
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerInfineon
PackagingTO-247-3
Pd - Power Dissipation536W
Td(off)275ns
Td(on)40ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)80A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)42pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.2V@1mA
Vce Saturation(VCE(sat))1.35V@75A,15V
Reverse Recovery Time(trr)114ns
Switching Energy(Eoff)3.2mJ
Turn-On Energy (Eon)1.61mJ
Input Capacitance(Cies)12.1nF
Output Capacitance(Coes)150pF
Gate Charge(Qg)436nC@15V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

Low VCE(sat) IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode

Features

AI Translation
  • Low VCE(sat) L5 technology offering
  • Very low collector-emitter saturation voltage VCEsat
  • Best-in-Class tradeoff between conduction and switching losses
  • 650V breakdown voltage
  • Low gate charge QG
  • Maximum junction temperature 175℃
  • Qualified according to JEDEC for target applications
  • Pb-free lead plating
  • RoHS compliant
  • Complete product spectrum and PSpice models

Applications

AI Translation
  • Uninterruptible power supplies
  • Solar photovoltaic inverters
  • Welding machines