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onsemi UJ3C120150K3SRoHS

Manufacturer
onsemi
MPN
UJ3C120150K3S
LCSC Part #
C45343199
Packaging
TO-247-3
Customer #
Key Attributes
Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, 1200 V, 150 mohm
Datasheetpdf icononsemi UJ3C120150K3S

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/JFETs
Manufactureronsemi
PackagingTO-247-3
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1
Sales UnitPiece

Introduction

AI Translation

This SiC FET device is based on a unique 'cascode' circuit configuration, in which a normally- on SiC JFET is co- packaged with a Si MOSFET to produce a normally- off SiC FET device. The device's standard gate- drive characteristics allows for a true "drop- in replacement" to Si IGBTs, Si FETs, SiC MOSFETs or Si super- junction devices. Available in the TO247- 3 package, this device exhibits ultra- low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads, and any application requiring standard gate drive.

Features

AI Translation
  • Typical On- resistance R<sub>OS(on),typ</sub>: 150 mΩ
  • Maximum Operating Temperature of 175℃
  • Excellent Reverse Recovery
  • Low Gate Charge
  • Low Intrinsic Capacitance
  • ESD Protected: HBM Class 2
  • This Device is Pb- Free, Halogen Free and is RoHS Compliant

Applications

AI Translation
  • EV Charging
  • PV Inverters
  • Switch Mode Power Supplies
  • Power Factor Correction Modules
  • Motor Drives
  • Induction Heating
In-Stock: 2
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QtyUnit PriceTotal Amount
1+$ 11.8756$ 11.88
10+$ 11.5171$ 115.17
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