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Infineon IKW75N60TRoHS

Manufacturer
Infineon
MPN
IKW75N60T
LCSC Part #
C44294
Packaging
TO-247-3
Customer #
Key Attributes
Low Loss DuoPack: IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HEdiode
Datasheetpdf iconInfineon IKW75N60T
In-Stock: 289
289 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 4.9491$ 4.95
10+$ 4.3026$ 43.03
30+$ 3.7391$ 112.17
90+$ 3.3499$ 301.49
480+$ 3.1708$ 1521.98
960+$ 3.091$ 2967.36
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerInfineon
PackagingTO-247-3
Pd - Power Dissipation428W
Td(off)330ns
Td(on)33ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)75A
Collector-Emitter Breakdown Voltage (Vces)600V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.1V@1.2mA
Vce Saturation(VCE(sat))2V@75A,15V
Gate Charge(Qg)470nC@15V
Reverse Recovery Time(trr)121ns
Switching Energy(Eoff)2.5mJ
Turn-On Energy (Eon)2mJ
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

Features

AI Translation
  • Very low VCE(sat) 1.5V (typ.)
  • Maximum Junction Temperature 175℃
  • Short circuit withstand time 5μs
  • Positive temperature coefficient in VCE(sat)
  • very tight parameter distribution
  • high ruggedness, temperature stable behaviour
  • very high switching speed Low EMI
  • Very soft, fast recovery anti-parallel Emitter Controlled HE diode
  • Qualified according to JEDEC for target applications
  • Pb-free lead plating; RoHS compliant

Applications

AI Translation
  • Frequency Converters
  • Uninterrupted Power Supply