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Infineon IPB021N10NM5LF2ATMA1 product image
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Infineon IPB021N10NM5LF2ATMA1RoHS

Manufacturer
Infineon
MPN
IPB021N10NM5LF2ATMA1
LCSC Part #
C44182141
Packaging
TO-263-3
Customer #
Key Attributes
375W 100V 176A 3.1V 1.6mΩ@15V 1 N-channel N-Channel TO-263-3 Single FETs, MOSFETs RoHS
Datasheetpdf iconInfineon IPB021N10NM5LF2ATMA1
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QtyUnit Price(Reference Only)Total Amount
1+$ 4.7103$ 4.71
10+$ 4.6082$ 46.08
30+$ 4.5386$ 136.16
100+$ 4.4705$ 447.05
Standard Packaging1000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-263-3
Output Capacitance(Coss)1.8nF
Pd - Power Dissipation375W
Configuration-
Drain to Source Voltage100V
Current - Continuous Drain(Id)176A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.1V
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)1.6mΩ@15V
Number1 N-channel
Input Capacitance(Ciss)13nF
Gate Charge(Qg)165nC
Vgs±20V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1000
Sales UnitPiece

Features

AI Translation
  • Ideal for hot-swap and electronic fuse applications
  • Ultra-low on-resistance RDS(on)
  • Wide safe operating area SOA
  • N-channel, normally-on
  • 100% avalanche tested
  • Lead-free lead plating; RoHS compliant
  • Halogen-free per IEC61249-2-21