Infineon IMW65R010M2HXKSA1
| Manufacturer | |
| MPN | IMW65R010M2HXKSA1 |
| LCSC Part # | C42670746 |
| Packaging | TO-247-3 |
| Customer # | |
| Key Attributes | SiC MOSFET 650V G2 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3 | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 130A | |
| Output Capacitance(Coss) | 386pF | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 5.6V | |
| Pd - Power Dissipation | 440W | |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF | |
| RDS(on) | 13.1mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.001nF | |
| Gate Charge(Qg) | 112nC | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
Built on Infineon's robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET delivers unparalleled performance, superior reliability, and great ease of use. It enables cost effective, highly efficient, and simplified designs to fulfill the ever- growing system and market needs.
Features
AI Translation
- Ultra-low switching losses
- Benchmark gate threshold voltage, VGS(th) = 4.5 V
- Robust against parasitic turn-on even with 0 V turn-off gate voltage
- Flexible driving voltage and compatible with bipolar driving scheme
- Robust body diode operation under hard commutation events
- XT interconnection technology for best-in-class thermal performance
Applications
AI Translation
- SMPS
- Solar PV inverters
- Energy storage and battery formation
- UPS
- EV charging infrastructure
- Motor drives
In-Stock: 5
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 20.9692 | $ 20.97 |
| 30+ | $ 19.8852 | $ 596.56 |
Standard Packaging30/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3 | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 130A | |
| Output Capacitance(Coss) | 386pF | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 5.6V | |
| Pd - Power Dissipation | 440W | |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF | |
| RDS(on) | 13.1mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.001nF | |
| Gate Charge(Qg) | 112nC | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
Built on Infineon's robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET delivers unparalleled performance, superior reliability, and great ease of use. It enables cost effective, highly efficient, and simplified designs to fulfill the ever- growing system and market needs.
Features
AI Translation
- Ultra-low switching losses
- Benchmark gate threshold voltage, VGS(th) = 4.5 V
- Robust against parasitic turn-on even with 0 V turn-off gate voltage
- Flexible driving voltage and compatible with bipolar driving scheme
- Robust body diode operation under hard commutation events
- XT interconnection technology for best-in-class thermal performance
Applications
AI Translation
- SMPS
- Solar PV inverters
- Energy storage and battery formation
- UPS
- EV charging infrastructure
- Motor drives
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |



