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XNRUSEMI XR120P02F product image
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XNRUSEMI XR120P02FRoHS

Manufacturer
XNRUSEMIAsian Brands
MPN
XR120P02F
LCSC Part #
C42456927
Packaging
PDFN-8L(5x6)
Customer #
Key Attributes
MOSFET P-CH 20V 120A PDFN-8L(5x6)
Datasheetpdf iconXNRUSEMI XR120P02F
In-Stock: 5,265
5,265 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
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QtyUnit PriceTotal Amount
5+$ 0.2503$ 1.25
50+$ 0.22$ 11.00
150+$ 0.207$ 31.05
500+$ 0.1908$ 95.40
2,500+$ 0.1836$ 459.00
5,000+$ 0.1793$ 896.50
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerXNRUSEMI
PackagingPDFN-8L(5x6)
Drain to Source Voltage20V
Current - Continuous Drain(Id)120A
Output Capacitance(Coss)1.368nF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))750mV
Pd - Power Dissipation124W
RDS(on)2.2mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)901pF
Number1 P-Channel
Input Capacitance(Ciss)10.611nF
Gate Charge(Qg)98nC@10V
TypeP-Channel
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Introduction

AI Translation

XR120P02F is a high cell density trench P-channel MOSFET, offering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. XR120P02F complies with RoHS and green product requirements, and has passed full-function reliability qualification.

Features

AI Translation
  • Ultra-low gate charge
  • RoHS-compliant green device
  • Excellent Cdv/dt immunity
  • Advanced high cell density trench technology