ElecSuper AON7400A(ES)
| Manufacturer | ElecSuperAsian Brands |
| MPN | AON7400A(ES) |
| LCSC Part # | C42434123 |
| Packaging | PDFN3X3-8L |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 40A PDFN3X3-8L |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ElecSuper | |
| Packaging | PDFN3X3-8L | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 155pF | |
| Current - Continuous Drain(Id) | 40A | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 30W | |
| RDS(on) | 12mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 876pF | |
| Gate Charge(Qg) | 11nC@4.5V | |
| Type | N-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The AON7400A(ES) is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product AON7400A(ES) is Pb-free.
Features
AI Translation
- 30V, RDS(ON)=6.5mΩ(TYP.) @VGS=10V
- RDS(ON)=10.0mΩ(TYP.) @VGS=4.5V
- Use trench MOSFET technology
- High density cell design for low RDS(on)
- Material: Halogen free
- Reliable and rugged
- Avalanche Rated
- Low leakage current
Applications
AI Translation
- PWM applications
- Load switch
- Power management in portable/desktop PCs
- DC/DC conversion
In-Stock: 4,735
4,735 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.0922 | $ 0.46 |
| 50+ | $ 0.081 | $ 4.05 |
| 150+ | $ 0.0754 | $ 11.31 |
| 500+ | $ 0.0712 | $ 35.60 |
| 2,500+ | $ 0.0678 | $ 169.50 |
| 5,000+ | $ 0.0661 | $ 330.50 |
Standard Packaging5000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ElecSuper | |
| Packaging | PDFN3X3-8L | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 155pF | |
| Current - Continuous Drain(Id) | 40A | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 30W | |
| RDS(on) | 12mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 876pF | |
| Gate Charge(Qg) | 11nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The AON7400A(ES) is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product AON7400A(ES) is Pb-free.
Features
AI Translation
- 30V, RDS(ON)=6.5mΩ(TYP.) @VGS=10V
- RDS(ON)=10.0mΩ(TYP.) @VGS=4.5V
- Use trench MOSFET technology
- High density cell design for low RDS(on)
- Material: Halogen free
- Reliable and rugged
- Avalanche Rated
- Low leakage current
Applications
AI Translation
- PWM applications
- Load switch
- Power management in portable/desktop PCs
- DC/DC conversion
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



