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ElecSuper BSC0702LS(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
BSC0702LS(ES)
LCSC Part #
C42434106
Packaging
PDFN5x6-8L
Customer #
Key Attributes
MOSFET N-CH 60V 190A PDFN5x6-8L
Datasheetpdf iconElecSuper BSC0702LS(ES)
In-Stock: 9,915
9,915 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.5464$ 0.55
10+$ 0.441$ 4.41
30+$ 0.3891$ 11.67
100+$ 0.3373$ 33.73
500+$ 0.3064$ 153.20
1,000+$ 0.2902$ 290.20
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingPDFN5x6-8L
Drain to Source Voltage60V
Output Capacitance(Coss)2.2nF
Current - Continuous Drain(Id)190A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation156W
Reverse Transfer Capacitance (Crss@Vds)135pF
RDS(on)3.4mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)5.44nF
Gate Charge(Qg)102nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

The BSC0702LS(ES) is N-Channel enhancement MOS Field Effect Transistor. Uses advanced shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product BSC0702LS(ES) is Pb-free.

Features

AI Translation
  • 60V, RDS(ON)=1.9mΩ(Typ.) @VGS=10V
  • Reliable and rugged RDS(ON)=2.6mΩ(Typ.) @VGS=4.5V
  • Avalanche Rated
  • High density cell design for low RDS(on)
  • Low leakage current
  • Material: Halogen free

Applications

AI Translation
  • PWM applications
  • Load switch
  • Power management in portable/desktop PCs
  • DC/DC conversion