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ElecSuper DMG1012UW-7(ES) product image
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ElecSuper DMG1012UW-7(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
DMG1012UW-7(ES)
LCSC Part #
C42412344
Packaging
SOT-323
Customer #
Key Attributes
MOSFET N-CH 20V 880mA SOT-323
Datasheetpdf iconElecSuper DMG1012UW-7(ES)
In-Stock: 6,260
6,260 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
20+$ 0.0278$ 0.56
200+$ 0.0217$ 4.34
600+$ 0.0182$ 10.92
3,000+$ 0.0162$ 48.60
9,000+$ 0.0144$ 129.60
21,000+$ 0.0135$ 283.50
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-323
Drain to Source Voltage20V
Output Capacitance(Coss)20pF
Current - Continuous Drain(Id)880mA
Gate Threshold Voltage (Vgs(th))750mV
Pd - Power Dissipation350mW
RDS(on)220mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)10pF
Number1 N-channel
Input Capacitance(Ciss)33pF
Gate Charge(Qg)800pC@4.5V
TypeN-Channel

Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

DMG1012UW-7(ES) is an N-channel enhancement mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. This device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product DMG1012UW-7(ES) is lead-free.

Features

AI Translation
  • 20V, RDS(ON) = 220 mΩ (typical) @ VGS = 4.5V
  • RDS(ON) = 290 mΩ (typical) @ VGS = 2.5V
  • RDS(ON) = 420 mΩ (typical) @ VGS = 1.8V
  • Trench MOSFET technology
  • High-density cell design for low RDS(ON)
  • Material: Halogen-free
  • Robust and reliable
  • Avalanche-rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion