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ElecSuper NTJD4001NT1G(ES) product image
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ElecSuper NTJD4001NT1G(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
NTJD4001NT1G(ES)
LCSC Part #
C42412340
Packaging
SOT-363
Customer #
Key Attributes
MOSFET N-CH 60V 300mA SOT-363
Datasheetpdf iconElecSuper NTJD4001NT1G(ES)
In-Stock: 2,680
2,680 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
10+$ 0.0462$ 0.46
100+$ 0.0361$ 3.61
300+$ 0.031$ 9.30
3,000+$ 0.0272$ 81.60
6,000+$ 0.0241$ 144.60
9,000+$ 0.0226$ 203.40
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-363
Drain to Source Voltage60V
Output Capacitance(Coss)3.3pF
Current - Continuous Drain(Id)300mA
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation350mW
RDS(on)1.8Ω@10V;2Ω@4.5V
Reverse Transfer Capacitance (Crss@Vds)1.3pF
Number2 N-Channel
Input Capacitance(Ciss)15pF
Gate Charge(Qg)1.6nC@4.5V
Vgs±20V
TypeN-Channel
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

NTJD4001NT1G(ES) is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product NTJD4001NT1G(ES) is lead-free.

Features

AI Translation
  • 60V, RDS(ON) = 1.8 Ω (typ.) at VGS = 10V
  • RDS(ON) = 2.0 Ω (typ.) at VGS = 4.5V
  • Trench MOSFET technology
  • High-density cell design for low RDS(on)
  • Halogen-free material
  • Robust and reliable
  • Avalanche rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop computers
  • DC/DC conversion