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ElecSuper 2N7002BK,215(ES) product image
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ElecSuper 2N7002BK,215(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
2N7002BK,215(ES)
LCSC Part #
C42412328
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 60V 300mA SOT-23
Datasheetpdf iconElecSuper 2N7002BK,215(ES)
In-Stock: 1,900
1,900 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
50+$ 0.018$ 0.90
500+$ 0.014$ 7.00
3,000+$ 0.0118$ 35.40
6,000+$ 0.0105$ 63.00
24,000+$ 0.0093$ 223.20
51,000+$ 0.0087$ 443.70
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-23
Drain to Source Voltage60V
Output Capacitance(Coss)11pF
Current - Continuous Drain(Id)300mA
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation350mW
RDS(on)1.85Ω@10V
Reverse Transfer Capacitance (Crss@Vds)4pF
Number1 N-channel
Input Capacitance(Ciss)28pF
Gate Charge(Qg)1.8nC@4.5V
Vgs±20V
TypeN-Channel
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Additional Information

TypeDetails
Minimum50
Multiple50
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

2N7002BK,215(ES) is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product 2N7002BK,215(ES) is lead-free.

Features

AI Translation
  • 60V, RDS(ON) = 1.85 Ω (typical), VGS = 10 V
  • RDS(ON) = 2.05 Ω (typical), VGS = 4.5 V
  • Trench MOSFET technology
  • High-density cell design for low RDS(ON)
  • ESD protection - HBM: 2kV
  • Halogen-free material
  • Robust and reliable
  • Avalanche rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion