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ElecSuper RUM001L02T2CL(ES) product image
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ElecSuper RUM001L02T2CL(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
RUM001L02T2CL(ES)
LCSC Part #
C42412321
Packaging
SOT-723
Customer #
Key Attributes
MOSFET N-CH 20V 900mA SOT-723
Datasheetpdf iconElecSuper RUM001L02T2CL(ES)
In-Stock: 5,060
5,060 In stock, ships now
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QtyUnit PriceTotal Amount
20+$ 0.0236$ 0.47
200+$ 0.0183$ 3.66
600+$ 0.0154$ 9.24
2,000+$ 0.0136$ 27.20
8,000+$ 0.0121$ 96.80
16,000+$ 0.0113$ 180.80
Standard Packaging8000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-723
Drain to Source Voltage20V
Output Capacitance(Coss)22pF
Current - Continuous Drain(Id)900mA
Gate Threshold Voltage (Vgs(th))650mV
Pd - Power Dissipation230mW
RDS(on)150mΩ@4.5V;200mΩ@2.5V
Reverse Transfer Capacitance (Crss@Vds)12pF
Number1 N-channel
Input Capacitance(Ciss)60pF
Gate Charge(Qg)1nC@4.5V
Vgs±10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging8000
Sales UnitPiece

Introduction

AI Translation

RUM001L02T2CL(ES) is an N-channel enhancement mode MOSFET. Utilizing advanced trench technology and design, it achieves excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product RUM001L02T2CL(ES) is lead-free.

Features

AI Translation
  • 20V, RDS(ON) = 150 mΩ (typical) at VGS = 4.5V
  • RDS(ON) = 200mΩ (typical) at VGS = 2.5V
  • High-density cell design for low RDS(ON)
  • Material: Halogen-free
  • Robust and durable
  • Avalanche-rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion