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ElecSuper DMG1012T-7(ES) product image
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ElecSuper DMG1012T-7(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
DMG1012T-7(ES)
LCSC Part #
C42412320
Packaging
SOT-523
Customer #
Key Attributes
MOSFET N-CH 20V 1.2A SOT-523
Datasheetpdf iconElecSuper DMG1012T-7(ES)
In-Stock: 800
800 In stock, ships now
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QtyUnit PriceTotal Amount
20+$ 0.0259$ 0.52
200+$ 0.0202$ 4.04
600+$ 0.017$ 10.20
3,000+$ 0.0151$ 45.30
9,000+$ 0.0135$ 121.50
21,000+$ 0.0126$ 264.60
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-523
Drain to Source Voltage20V
Output Capacitance(Coss)22pF
Current - Continuous Drain(Id)1.2A
Gate Threshold Voltage (Vgs(th))650mV
Pd - Power Dissipation230mW
RDS(on)150mΩ@4.5V;200mΩ@2.5V
Reverse Transfer Capacitance (Crss@Vds)12pF
Number1 N-channel
Input Capacitance(Ciss)60pF
Gate Charge(Qg)1nC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

DMG1012T-7(ES) is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product DMG1012T-7(ES) is lead-free.

Features

AI Translation
  • 20V, RDS(ON) = 150 mΩ (typ) at VGS = 4.5V
  • RDS(ON) = 200 mΩ (typ) at VGS = 2.5V
  • High-density cell design for low RDS(ON)
  • Halogen-free material
  • Robust and reliable
  • Avalanche rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop computers
  • DC/DC conversion