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ElecSuper IRLR3410TRPBF(ES) product image
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ElecSuper IRLR3410TRPBF(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
IRLR3410TRPBF(ES)
LCSC Part #
C42412310
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 100V 15A TO-252
Datasheetpdf iconElecSuper IRLR3410TRPBF(ES)
In-Stock: 4,470
4,470 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2558$ 1.28
50+$ 0.1985$ 9.93
150+$ 0.1739$ 26.09
500+$ 0.1432$ 71.60
2,500+$ 0.1295$ 323.75
5,000+$ 0.1213$ 606.50
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingTO-252
Drain to Source Voltage100V
Output Capacitance(Coss)52pF
Current - Continuous Drain(Id)15A
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation46W
RDS(on)80mΩ@10V;90mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)42pF
Number1 N-channel
Input Capacitance(Ciss)1.085nF
Gate Charge(Qg)22nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

IRLR3410TRPBF(ES) is an N-channel enhancement mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) at low gate charge. This device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product IRLR3410TRPBF(ES) is lead-free.

Features

AI Translation
  • 100V, RDS(ON) = 80 mΩ (typ.) @VGS=10V
  • RDS(ON) = 90 mΩ (typ.) @VGS = 4.5V
  • High-density cell design for low RDS(ON)
  • Material: Halogen-free
  • Robust and reliable
  • Avalanche-rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion