ElecSuper IRF1404PBF(ES)
| Manufacturer | ElecSuperAsian Brands |
| MPN | IRF1404PBF(ES) |
| LCSC Part # | C42412305 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | MOSFET N-CH 40V 140A TO-220 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ElecSuper | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 2.8nF | |
| Current - Continuous Drain(Id) | 140A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 83W | |
| RDS(on) | 2mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 480pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.83nF | |
| Gate Charge(Qg) | 66nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
IRF1404PBF(ES) is an N-channel enhancement-mode MOSFET. Utilizing advanced shielded gate trench technology and design, it delivers excellent RDS(ON) with low gate charge. This device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product IRF1404PBF(ES) is lead-free.
Features
AI Translation
- 40V, RDS(ON) = 2 mΩ (typical), VGS = 10V
- RDS(ON) = 3 mΩ (typical), VGS = 4.5V
- High-density cell design for low RDS(ON)
- Halogen-free material
- Robust and durable
- Avalanche-rated
- Low leakage current
Applications
AI Translation
- PWM applications
- Load switching
- Power management for portable/desktop computers
- DC/DC conversion
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.7589 | $ 0.76 |
| 10+ | $ 0.6045 | $ 6.05 |
| 50+ | $ 0.5265 | $ 26.33 |
| 100+ | $ 0.4502 | $ 45.02 |
| 500+ | $ 0.4047 | $ 202.35 |
| 1,000+ | $ 0.3819 | $ 381.90 |
Standard Packaging50/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ElecSuper | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 2.8nF | |
| Current - Continuous Drain(Id) | 140A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 83W | |
| RDS(on) | 2mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 480pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.83nF | |
| Gate Charge(Qg) | 66nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
IRF1404PBF(ES) is an N-channel enhancement-mode MOSFET. Utilizing advanced shielded gate trench technology and design, it delivers excellent RDS(ON) with low gate charge. This device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product IRF1404PBF(ES) is lead-free.
Features
AI Translation
- 40V, RDS(ON) = 2 mΩ (typical), VGS = 10V
- RDS(ON) = 3 mΩ (typical), VGS = 4.5V
- High-density cell design for low RDS(ON)
- Halogen-free material
- Robust and durable
- Avalanche-rated
- Low leakage current
Applications
AI Translation
- PWM applications
- Load switching
- Power management for portable/desktop computers
- DC/DC conversion
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



