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ElecSuper BSS84PWH6327(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
BSS84PWH6327(ES)
LCSC Part #
C42379941
Packaging
SOT-323
Customer #
Key Attributes
MOSFET P-CH 60V 0.18A SOT-323
Datasheetpdf iconElecSuper BSS84PWH6327(ES)
In-Stock: 120
120 In stock, ships now
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QtyUnit PriceTotal Amount
20+$ 0.0266$ 0.53
200+$ 0.0207$ 4.14
600+$ 0.0175$ 10.50
3,000+$ 0.0155$ 46.50
9,000+$ 0.0138$ 124.20
21,000+$ 0.0129$ 270.90
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-323
Configuration-
Drain to Source Voltage60V
Current - Continuous Drain(Id)180mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation300mW
Reverse Transfer Capacitance (Crss@Vds)1.6pF
RDS(on)6.3Ω@4.5V
Number1 P-Channel
Input Capacitance(Ciss)17pF
Gate Charge(Qg)1.1nC@4.5V
TypeP-Channel
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Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The BSS84PWH6327(ES) is P-Channel enhancement MOS Field Effect Transistor. Uses advanced technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product BSS84PWH6327(ES) is Pb-free.

Features

AI Translation
  • -60V, RDS(ON)=3.5Ω(Typ.) @VGS=-10V RDS(ON)=4.5Ω(Typ.) @VGS=-4.5V
  • Fast Switching
  • High density cell design for low RDS(on)
  • Material: Halogen free
  • Reliable and rugged
  • Avalanche Rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Power management in portable/desktop PCs
  • DC/DC conversion