WXNSIC G2022

The G2022 is a high-voltage, high-speed power MOSFET high- and low-side gate driver IC. It features independent high-side and low-side referenced output channels. Utilizing a high-voltage compatible process, both high-side and low-side gate drive circuits are integrated on a single chip. Logic inputs are compatible with CMOS or LSTTL logic output levels as low as 3.3V, and the outputs feature high-current pulse capability with shoot-through prevention dead-time logic. The floating channel supports driving of high-side N-channel power MOSFETs, with a maximum floating supply voltage of 250V. Housed in a SOP8 package, the device operates over a temperature range of -40°C to 125°C. The floating channel requires an external bootstrap circuit, and both high-side and low-side channels include undervoltage lockout (UVLO) protection.

• Floating high-side channel with bootstrap operation
• Maximum operating voltage +250V
• Compatible with 3.3V, 5V, and 15V input logic
• dVs/dt immunity up to ±50V/ns
• Vs negative bias capability down to -9V
• Gate drive voltage 5V to 20V
• Integrated UVLO circuit
  • UVLO positive-going threshold 4.4V
  • UVLO negative-going threshold 4.2V
• Cross-conduction prevention dead-time logic
  • Dead time 200ns
• Propagation delay characteristics
  • Turn-on/turn-off propagation delay Ton/Toff = 150ns/140ns
  • Delay matching time 50ns
• Wide temperature range -40°C to 125°C
• Output stage source/sink current capability 1.2A/1.5A
• RoHS compliant
• SOP8 (S)

• Motor Control
• Air Conditioner/Washing Machine
• General-Purpose Inverter
• Micro Inverter Drive