MDD(Microdiode Semiconductor) 1N4148WS-E
| Producent | MDD(Microdiode Semiconductor)Asian Brands |
| Nr części prod. | 1N4148WS-E |
| Nr LCSC | C41371421 |
| Opak. | SOD-323 |
| Numer Klienta | |
| Klucz. cechy | DIODE GP 100V 150mA SOD-323 |
| Karta Katalogowa | MDD(Microdiode Semiconductor) 1N4148WS-E |
| Zgodność z RoHS | 1 dokumentów dostępnych |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | MDD(Microdiode Semiconductor) | |
| Opak. | SOD-323 | |
| Reverse Recovery Time (trr) | 4ns | |
| Operating Junction Temperature Range | -55℃~+125℃ | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Pd - Power Dissipation | 400mW | |
| Voltage - Forward(Vf@If) | 1.25V@150mA | |
| Reverse Leakage Current (Ir) | 1uA | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 150mA |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | MDD(Microdiode Semiconductor) | |
| Opak. | SOD-323 | |
| Reverse Recovery Time (trr) | 4ns | |
| Operating Junction Temperature Range | -55℃~+125℃ | |
| Diode Configuration | 1 Independent |
| Typ | Opis | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Pd - Power Dissipation | 400mW | |
| Voltage - Forward(Vf@If) | 1.25V@150mA | |
| Reverse Leakage Current (Ir) | 1uA | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 150mA |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Fast switching speed
- Surface mount package, ideal for automatic insertion
- Suitable for general-purpose switching applications
- High conductance
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | MDD(Microdiode Semiconductor) | |
| Opak. | SOD-323 | |
| Reverse Recovery Time (trr) | 4ns | |
| Operating Junction Temperature Range | -55℃~+125℃ | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Pd - Power Dissipation | 400mW | |
| Voltage - Forward(Vf@If) | 1.25V@150mA | |
| Reverse Leakage Current (Ir) | 1uA | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 150mA |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | MDD(Microdiode Semiconductor) | |
| Opak. | SOD-323 | |
| Reverse Recovery Time (trr) | 4ns | |
| Operating Junction Temperature Range | -55℃~+125℃ | |
| Diode Configuration | 1 Independent |
| Typ | Opis | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Pd - Power Dissipation | 400mW | |
| Voltage - Forward(Vf@If) | 1.25V@150mA | |
| Reverse Leakage Current (Ir) | 1uA | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 150mA |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Fast switching speed
- Surface mount package, ideal for automatic insertion
- Suitable for general-purpose switching applications
- High conductance
C41371421 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
