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Infineon IRLZ44NPBFRoHS

Manufacturer
MPN
IRLZ44NPBF
LCSC Part #
C38774
Packaging
TO-220AB
Customer #
Key Attributes
MOSFET N-CH 55V 47A TO-220AB
Datasheetpdf iconInfineon IRLZ44NPBF
In-Stock: 413
413 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.1899$ 1.19
10+$ 0.9916$ 9.92
50+$ 0.8811$ 44.06
100+$ 0.7575$ 75.75
500+$ 0.7039$ 351.95
1,000+$ 0.6779$ 677.90
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-220AB
Drain to Source Voltage55V
Output Capacitance(Coss)400pF
Current - Continuous Drain(Id)47A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)25mΩ@5V
Number1 N-channel
Input Capacitance(Ciss)1.7nF
Gate Charge(Qg)48nC@5V
TypeN-Channel

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

The 5th Generation HEXFET utilizes advanced process technology to achieve the lowest possible on-resistance per unit silicon area. This advantage, combined with the well-known fast switching speed and rugged device design of HEXFET power MOSFETs, provides designers with an extremely efficient device suitable for a wide range of applications. The TO-220 package is widely preferred across all commercial-industrial applications at power dissipation levels up to approximately 50 watts. Its low thermal resistance and low package cost have made it broadly accepted throughout the industry.

Features

AI Translation
  • Logic-level gate drive
  • Advanced process technology
  • Dynamic dv/dt rating
  • 175°C operating temperature
  • Fast switching
  • Fully avalanche rated
  • Lead-free